Diodes Inc.'s DFN3020 packaged MOSFETs take 70 percent less space

DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, has introduced the first MOSFETs in a new range of space-saving DFN3020 packaged discrete products.

Three dual MOSFET combinations have been released, comprising 20V and 30V N-channel and 30V complementary devices. These include the ZXMN2AMC (dual 20V N-channel), ZXMN3AMC (dual 30V N-channel), and ZXMC3AMC (complementary 30V) DFN3020 packaged MOSFETs. While offering a comparable electrical performance as much larger SOT23 packaged parts, these dual DFN3020 MOSFETs will replace two separate SOT23 packaged MOSFETs, resulting in a board space saving of 70 percent.

With a footprint of just 6mm2 and an off-board height of 0.8mm, some 40 percent less than SOT23 or TSOP-6 packaged parts, the DFN3020 MOSFET portfolio will suit load switch or boost conversion circuits in space-constrained low profile portable consumer electronics including tablets and netbooks. The complementary DFN3020 MOSFETs will also function well as a half bridge for driving motor loads in industrial applications.

The MOSFETs’ junction to ambient thermal resistance of 83ºC/W also means that power dissipation is high, at up to 2.4W continuous and operating temperatures are cooler than achievable with SOT23 packaged MOSFETs leading to increased reliability.