IR’s new patented, hermetic, compact SMD0.2 package utilizing Aluminum Nitride (AlN) ceramic for enhanced thermal conductivity, is designed specifically for RAD-Hard MOSFETs and addresses the needs of power designers requiring reduced weight and system size. With a 0.3” x 0.2” x 0.1” (8mm x 5mm x 3mm) footprint weighing only 0.25 g, the SMD0.2 surface mount package is 50 percent smaller and 75 percent lighter compared to existing SMD0.5 packages while dissipating the same amount of power at around 23 W.
“This new family of devices combines IR’s heritage in RAD-Hard MOSFET technology with innovative patented packaging technology to help engineers meet the challenges of designing space applications that demand increasingly smaller, lighter, highly reliable system solutions," said Odile Ronat, discrete marketing manager, IR’s HiRel Business Unit.
The new MOSFETs utilize IR’s proven RAD-Hard MOSFET technology. Both 100 krad(Si) and 300 krad(Si) total dose rating are available, with SEE rating of 85MeV/(mg/cm2). Standard and logic level N-channel and P-channel devices are also available. Voltages other than 100 V are also available on request. The SMD0.2 package is available with either metal lid or ceramic lid.
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