Diodes Inc. releases first product in thermally enhanced PowerDI5060 package

DALLAS, USA: Diodes Inc. has released of the company’s first device in its unique PowerDI5060 package, the DMP3010LPS 30V rated p-channel enhancement mode MOSFET, offering designers of notebooks, netbooks and other consumer electronics improvements in reliability and reductions in pcb space requirements.

With a junction to case thermal resistance (Rthj-c) of 2.1°C/W, the PowerDI5060’s thermal resistance is 10 times lower than an SO8 alternative, improving on power dissipation performance, resulting in cooler running and more reliable product design. Its off-board height of 1.1mm is also 54 percent less than that of SO8, making it well suited for low profile applications.

With a large drain pad significantly reducing package inductance and resistance parameters, the PowerDI5060 package helps to significantly boost p-channel MOSFET performance. With the DMP3010LPS’s low typical on-resistance of 7.8mΩ at 10V VGS on-state losses are effectively minimized in load switching and battery charging duties.